PART |
Description |
Maker |
MGSF3454XT1 MGSF3454XT1_D ON1908 MGSF3454XT1-D ON1 |
From old datasheet system N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTD1312_D ON2465 |
SINGLE TMOS POWER MOSFET 30 VOLTS From old datasheet system
|
ON Semi
|
MMSF5P02HD MMSF5P02HD_D ON2272 ON2271 |
SINGLE TMOS POWER MOSFET 8.7 AMPERES 20 VOLTS From old datasheet system
|
MOTOROLA[Motorola Inc] ON Semi MOTOROLA[Motorola, Inc]
|
MMSF5N03HD MMSF5N03HD_D ON2270 |
SINGLE TMOS POWER MOSFET 5.0 AMPERES 30 VOLTS From old datasheet system
|
Motorola, Inc. ON Semi
|
MTSF3N03HD ON2664 ON2663 |
SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.040 OHM From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆 TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
MMFT5P03HD ON2230 MMFT5P03HDT3 ON2229 |
TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS From old datasheet system TMOS P-CHANNEL FIELD FEECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
MMFT3055ET1 MMFT3055ET3 |
N-Channel TMOS E-FET Power MOSFET
|
ON Semiconductor
|
MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G |
TMOS Power FET TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
|
ONSEMI[ON Semiconductor]
|
MTB15N06E |
TMOS POWER FET 15 AMPERES 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|